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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 80N50P
trr
RDS(on)
VDSS ID25
= 500 V = 66 A 65 m 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Transient Continuous TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 TC = 25 C
Maximum Ratings 500 500 40 30 66 200 80 80 3.0 10 700 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either source tab S can be used forsource current or Kelvin gate return.
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz; IISOL 1 mA
300 2500
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/ib.in. 1.5/13 Nm/ib.in. 30 g
Features l Fast intrinsic diode l International standard package l Unclamped Inductive Switching (UIS) rated l UL recognized. l Isolated mounting base
Symbol Test Conditions (TJ = 25 C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 A VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 200 25 1 65 V V nA A mA m
Advantages l Easy to mount l Space savings l High power density
VGS = 10 V, ID = 0.5 ID25, Note 1
(c) 2006 IXYS All rights reserved
DS99477E(01/06)
IXFN 80N50P
Symbol Test Conditions Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. 35 70 12.7 VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 120 25 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5*ID25 RG = 2 (External) 27 70 18 195 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 64 S nF pF pF ns ns ns ns nC nC nC 0.18 C/W 0.05 C/W miniBLOC, SOT-227B (IXFN) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 20 V; ID = 0.5 ID25, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
Characteristic Values TJ = 25 C unless otherwise specified) Min. Typ. Max. 80 200 1.5 200 0.8 8 A A V ns C A
Note 1: Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXFN 80N50P
Fig. 1. Output Characte r is tics @ 25 C
80 70 60 V GS = 10V 8V 180 160
Fig. 2. Exte nde d Output Char acte ris tics @ 25 C
V GS = 10V 8V
7V I D - Amperes
140 120 100 80 60 40 6V 7V
I D - Amperes
50 40 30 20 10 0 0 1 2 3 4 5 6 6V
5V
20 5V 0 0 3 6 9 1 2 1 5 1 8 21 24 27
V D S - V olts Fig. 3. Output Characte r is tics @ 125 C
80 70 60 V GS = 10V 7V 3.4 3.1 V GS = 10V
V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 40A V alue vs . Junction Te m pe rature
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 40A I D = 80A
I D - Amperes
50 40 30 20 10 0 0 2 4 6 8
6V
5V
10
12
14
-50
-25
0
25
50
75
100
125
150
V D S - V olts Fig. 5. RDS(on) Norm alize d to ID = 40A V alue vs . Drain Curr e nt
3.2 3 2.8 V GS = 10V TJ = 125 C
TJ - Degrees Centigrade
Fig. 6. Dr ain Cur r e nt vs . Cas e T e m p e r atur e
70 60 50
R D S ( o n ) - Normalized
2.6 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 140 160 180 TJ = 25 C
I D - Amperes
2.4
40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
I D - A mperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFN 80N50P
Fig. 7. Input Adm ittance
140 120 100 140 120 100 80 60 40 20 0 4 4.5 5 5.5 6 6.5 7 7.5 0 20 40 60 80 100 120 140 TJ = -40C 25C 125C
Fig. 8. Transconductance
80 60 40 20 0
TJ = 125C 25C -40C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
250 10 9 200 8 7 150 VDS = 250V I D = 40A I G = 10mA
g f s - Siemens
I D - Amperes
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200
100
50
0
V S D - Volts Fig. 11. Capacitance
100000 f = 1MHz 1000
Q G - NanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
Capacitance - PicoFarads
10000
R DS(on) Limit
I D - Amperes
C iss
100 25s 100s 10 1ms TJ = 150C TC = 25C 1 10ms
1000 C oss 100 C rss 10 0 5 10 15 20 25 30 35 40
DC
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
1000
V D S - Volts
IXFN 80N50P
Fig. 13. Maxim um Transient Therm al Resistance
1.00
R ( t h ) J C - C / W
0.10
0.01 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
(c) 2006 IXYS All rights reserved

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